2.4 Electrochemical Degradation Mechanisms in AlGaN/GaN HEMTs
نویسندگان
چکیده
The nature of structural degradation in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Moisture from the environment and/or adsorbed water on the III-N surface were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical cell formed at the gate edge where gate metal, the III-N surface and the passivation layer meet.
منابع مشابه
Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs
The nature of structural degradation in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Moisture from the environment and/or adsorbed water on the III-N surface were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical ...
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...........................................................................................................................................1 CHAPTER I: INTRODUCTION ............................................................................................................2 OVERVIEW OF GAN HEMTS .......................................................................................................
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